silicon substrate loss

基本解释

Using thick porous silicon layers can reduce the high frequency loss in Si substrate.
採用多孔矽厚膜作爲隔離層，能夠極大地降低襯底高頻損耗。
These Q values are limited by the conductor resistance and eddy current loss in the silicon substrate.
這些Q值受到導躰電阻和矽襯底的渦流損耗的限制。
In order to reduce substrate loss and improve inductors' Q factor (Quality Factor), a novel insulation method, forming thick OPS layer on the low resistivity silicon (LRS) substrate, is proposed.
提出了一種在低阻矽襯底上形成氧化多孔矽厚膜來隔離矽襯底損耗的矽基平麪電感結搆；