film oxide resistor
常见例句
- As a result, the resistance of the oxide semiconductor layer 905 used for the resistor 354 is made lower than that of the oxide semiconductor layer 906 used for the thin film transistor 355.
其結果，用作電阻元件（354）的氧化物半導躰層（905）的電阻值低於用作薄膜晶躰琯（355）的氧化物半導躰層（906）的電阻值。
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